Effect of 1wt% Gold Nanoparticles on the Electrical and Detection parameters of Gold Chloride/n-Si and Gold Chloride/p-Si Photodiodes

We synthesized a thin film of Au nanoparticles-decorated Gold (III) Chloride dye on both n-Si and p-Si substrates by the spin coating technique. Then, the metal-semiconductor devices were fabricated by evaporation of Co metal and Al ohmic contacts on the front and back surfaces of the Gold (III) Chloride film-covered substrates, respectively. Thus, Co/ Gold (III) Chloride: Au NPs /n-Si and Co/ Gold (III) Chloride: Au NPs /p-Si Schottky photodiodes were fabricated and characterized by I–V measurements under dark and various light power illumination intensities at room temperature. The devices exhibited good rectifying behaviors and low barrier heights. Various diode parameters such as ideality factor, barrier height, and series resistance values were calculated and compared for the fabricated photodiodes. The Au nanoparticles-decorated devices exhibited good photodiode and photodetector properties. Various detection parameters revealed that the obtained devices can be improved for optoelectronic applications.