On-Chip Full-UV-Band Photodetectors Enabled by Hot Hole Extraction

Achieving on-chip, full-UV-band photodetection across UV-A (315-400 nm), UV-B (280-315 nm), and UV-C (100-280 nm) bands remains challenging due to the limitations in traditional materials, which often have narrow detection ranges and require high operating voltages. In this study, we introduce a self-driven, on-chip photodetector based on a heterostructure of hybrid gold nanoislands (Au NIs) embedded in H-glass and cesium bismuth iodide (Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub>). The Au NIs act as catalytic nucleation sites, enhancing crystallinity and facilitating the vertical alignment of the interconnected Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub> petal-like thin film. A built-in electric field developed at the heterojunction efficiently separates hot holes generated in the Au NIs under UV illumination, transferring them to the valence band of Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub> and minimizing recombination losses. The device demonstrates an ultrahigh open-circuit voltage of 0.6 V, exceptional responsivity of 0.88 A/W, and a detection threshold of 90 nW/cm<sup>2</sup>, outperforming the existing thin film-based UV photodetectors under self-driven mode. Long-term stability tests confirmed robust operational reliability under ambient conditions for up to eight months. This architecture, driven by efficient hot hole dynamics, represents a significant advancement for full-UV-band optoelectronics with promising applications in environmental monitoring, flame detection, biomedical diagnostics, and secure communication systems.

Authors

Institutions

Publication Details

Journal
ACS Nano
Published
2025-02-06
DOI
https://doi.org/10.1021/acsnano.4c16106
Citations
6
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
4.38

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

On-Chip Full-UV-Band Photodetectors Enabled by Hot Hole Extraction

K. D. M. Rao, Indrajeet Mandal, Sayan Kanungo, Sougata Karmakar et al.
6 citations
ACS Nano
Perovskite Materials and Applications
4.38
article

On-Chip Full-UV-Band Photodetectors Enabled by Hot Hole Extraction

K. D. M. Rao, Indrajeet Mandal, Sayan Kanungo, Sougata Karmakar, Nitya Nand Gosvami, Manohar Chirumamilla, Gurupada Ghorai, S. Maidul Haque, A. V. Muhammed Ali, Tamilarasan Palanisamy, N. M. Anoop Krishnan, M. Sridevi, Amarnath Reddy Allu, N. K. Murugasenapathi, Rajiv K. Singh, S.G. Ash
article en
6 citations

Abstract

Achieving on-chip, full-UV-band photodetection across UV-A (315-400 nm), UV-B (280-315 nm), and UV-C (100-280 nm) bands remains challenging due to the limitations in traditional materials, which often have narrow detection ranges and require high operating voltages. In this study, we introduce a self-driven, on-chip photodetector based on a heterostructure of hybrid gold nanoislands (Au NIs) embedded in H-glass and cesium bismuth iodide (Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub>). The Au NIs act as catalytic nucleation sites, enhancing crystallinity and facilitating the vertical alignment of the interconnected Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub> petal-like thin film. A built-in electric field developed at the heterojunction efficiently separates hot holes generated in the Au NIs under UV illumination, transferring them to the valence band of Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub> and minimizing recombination losses. The device demonstrates an ultrahigh open-circuit voltage of 0.6 V, exceptional responsivity of 0.88 A/W, and a detection threshold of 90 nW/cm<sup>2</sup>, outperforming the existing thin film-based UV photodetectors under self-driven mode. Long-term stability tests confirmed robust operational reliability under ambient conditions for up to eight months. This architecture, driven by efficient hot hole dynamics, represents a significant advancement for full-UV-band optoelectronics with promising applications in environmental monitoring, flame detection, biomedical diagnostics, and secure communication systems.

ACS NanoVol. 19(6)
Central Electrochemical Research Institute (IN), Central Glass and Ceramic Research Institute (IN), National Physical Laboratory (GB), Universität Hamburg (DE), Indian Association for the Cultivation of Science (IN), Birla Institute of Technology and Science - Hyderabad Campus (IN), Advanced Device Technology (United States) (US), Indian Institute of Technology Delhi (IN), Birla Institute of Technology and Science, Pilani (IN), Hamburg University of Technology (DE), CSIR National Physical Laboratory of India (IN), Aalborg University (DK), Academy of Scientific and Innovative Research (IN)
Science and Engineering Research Board, UGC-DAE Consortium for Scientific Research, University Grants Commission
Openalex Percentile: Top 6%
Perovskite Materials and Applications
4.38
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.