Ka-band single-pole double-throw switch in GaN MMIC technology

Abstract This work describes the design process of a single-pole double-throw (SPDT) microwave switch operating at Ka-band. It is tailored to a tunable reflective termination design that can be used in tunable power amplifier configurations. A high electron mobility transistor and a resonating network are employed in shunt configuration to enhance the performance in the output port’s active and inactive conditions. The small and large signal measurements showcase a 2 GHz bandwidth with an insertion loss and isolation better than −1.8 dB and −25 dB, respectively, and handling power levels of up to 3 W at 30.5 GHz. The load-pull measurements across the entire Smith chart offer comprehensive insights into the behavior of the SPDT when operating with complex and reactive loads, fulfilling the purpose of tunable reactive termination.