Proton irradiation effects on silicon heterojunction solar cells with MoOx selective contacts

In this study, we investigate the effects of proton irradiation on silicon-based heterojunction and molybdenum oxide (MoO x ) selective contact solar cells. The main idea is to study their potential application in small satellites for measurement and monitoring. The irradiation dose simulates the aggressive environment found in Low Earth Orbit (LEO), where many satellites currently use Group III-VI (GaInP/GaAs/Ge) solar cells due to their superior efficiency, albeit at a higher cost. The experimental approach includes fabrication, irradiation, and characterization methods. Our results show a decrease in fill factor (F.F.) and overall efficiency after irradiation, mainly caused by a decrease in shunt resistance and an increase in series resistance. In addition, open-circuit voltage (V oc ) and short-circuit current (I sc ) may be affected by displacement damage defects caused by the irradiation process within the active region or by the formation of new point defects.

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Publication Details

Journal
Materials Science in Semiconductor Processing
Published
2025-02-06
DOI
https://doi.org/10.1016/j.mssp.2025.109312
Citations
2
Primary Topic
Silicon and Solar Cell Technologies
Type
article
Field-Weighted Citation Impact
1.46

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article

Proton irradiation effects on silicon heterojunction solar cells with MoOx selective contacts

R. García-Hernansanz, E. San Andrés, J. Olea, Joaquim Puigdollers et al.
2 citations
Materials Science in Semiconductor Processing
Silicon and Solar Cell Technologies
1.46
article

Proton irradiation effects on silicon heterojunction solar cells with MoOx selective contacts

R. García-Hernansanz, E. San Andrés, J. Olea, Joaquim Puigdollers, S. Duarte-Cano, S. Algaidy, Milad Rezaei, Ignacio Torres, Rocío Barrio, Pablo Ortega, C. Voz, A. del Prado, F. Pérez-Zenteno, D. Caudevilla, Emilio Ros, E. García-Hemme, Juan Antonio Clemente, R. Benítez-Fernández
article en
2 citations

Abstract

In this study, we investigate the effects of proton irradiation on silicon-based heterojunction and molybdenum oxide (MoO x ) selective contact solar cells. The main idea is to study their potential application in small satellites for measurement and monitoring. The irradiation dose simulates the aggressive environment found in Low Earth Orbit (LEO), where many satellites currently use Group III-VI (GaInP/GaAs/Ge) solar cells due to their superior efficiency, albeit at a higher cost. The experimental approach includes fabrication, irradiation, and characterization methods. Our results show a decrease in fill factor (F.F.) and overall efficiency after irradiation, mainly caused by a decrease in shunt resistance and an increase in series resistance. In addition, open-circuit voltage (V oc ) and short-circuit current (I sc ) may be affected by displacement damage defects caused by the irradiation process within the active region or by the formation of new point defects.

Materials Science in Semiconductor ProcessingVol. 190
Universidad Complutense de Madrid (ES), Instituto Tecnológico y de Energías Renovables (ES), Universidad Politécnica de Madrid (ES), Universitat Politècnica de Catalunya (ES)
Universidad Complutense de Madrid, Ministerio de Ciencia e Innovación, Research Executive Agency, FP7 Coordination of Research Activities
Affordable and clean energy
Openalex Percentile: Top 20%
Silicon and Solar Cell Technologies
1.46
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