Unveiling Device Corner-Point Potential in Sensing Domain: COVID Biomarker S-Protein Detection with Novel Ge_0.958Sn_0.042 Material-based TFET Biosensor

In this paper, a unique Ge 0.958 Sn 0.042 TFET-based biosensor is proposed for the successful detection of the biomarker S-protein, utilizing a combination of low-k(nanogap cavity) and high-k gate insulating dielectric materials, along with an intentional corner-point at the source/channel junction. This interdisciplinary work aims to explore the potential of the corner-point, which generally produces detrimental or adverse effect in electronic or device domain, in the sensing domain in terms of responsivity, sensitivity, stability, linearity, and efficiency. For the first time, comprehensive design guidelines, optimizing channel epilayer thickness and nanogap cavity length, are provided. The paper highlights the investigation of the interplay between the electrostatics associated with the corner-point and with the low-k/high-k dielectric junction, leading to the optimization of the channel epilayer thickness and the nanogap cavity length. Additionally, the potential for reducing the minimum number of required biomolecules for successful detection is introduced for the first time in this paper. Furthermore, the steric effect on the sensitivity is also studied to incorporate some practical scenario.