Silicon‐Integrated Perovskite Photonic Laser Based on Bound States in Continuum

Abstract On‐chip light sources are essential in modern technology, serving a broad range of applications, from sensing to display and communication. Lead halide perovskites, a new class of ionic semiconductors with excellent optical and optoelectronic properties, as well as solution processability, hold great potential in achieving coherent light sources. Compared to costly III‐V‐based compound semiconductor on‐chip lasers with threading dislocation, perovskite with high defect‐tolerance offers decisive advantages for flexible, cost‐effective, and massive deposition on arbitrary substrates. Despite the success of numerous perovskite lasers, true on‐chip integration, i.e., monolithic integration on silicon platforms, remains very little explored. Physically, light confinement by perovskite structures on silicon is unlikely due to substantial energy leakage into the silicon substrate. Herein, to address this bottleneck, the study presents the experimental realization of perovskite microlasers on silicon chips operating at visible and near‐infrared frequencies, utilizing bound states in the continuum (BICs) to suppress intrinsic light leakage. Using a top‐down focused ion beam nanofabrication technique, perovskite microdisks are fabricated with ultrasmooth sidewalls. A high laser quality factor of 4850 is observed at a wavelength of approximately 822 nm. The simple but rational integration solutions proposed here pave the way for the dense incorporation of perovskite laser sources into on‐chip photonic circuits, supporting the development of perovskite nanophotonics and their integration with microelectronic platforms.