Ultrafast Pulse Signal Detection Based on a Dual-transistor Structure
In this paper, we propose and experimentally demonstrate a novel method for the detection of ultrafast pulse signals, utilizing an AOS transistor-based 2T0C DRAM unit. By leveraging the ultrafast programming capability and long retention time of the 2 TOC unit, it can extend the duration of the signal, thereby achieving stable detection. The experimental results demonstrate that the fabricated InAlZnO 2T0C unit is capable of effectively capturing high-speed signals as short as 25 nanoseconds and possesses over $10^{8}$ amplifications in the time domain for pulse signals. The stable and highly efficient detection method based on the 2 TOC unit holds promise as an ideal choice for future fast signal detection.
Authors
- Hailong Ji (ORCID: https://orcid.org/0000-0002-8667-9127)
- Cuimei Wang
- Shanguo Huang (ORCID: https://orcid.org/0000-0002-0750-2340)
- Yimao Cai (ORCID: https://orcid.org/0000-0002-6854-8211)
- Haisu Zhang (ORCID: https://orcid.org/0000-0001-7823-6257)
- Zongwei Wang
- Zhengyuan Zhai (ORCID: https://orcid.org/0000-0002-8154-1540)
- Lin Bao (ORCID: https://orcid.org/0000-0002-3146-6124)
- Hao Zhang (ORCID: https://orcid.org/0000-0003-3410-7829)
Institutions
- Beijing University of Posts and Telecommunications (CN)
- Peking University (CN)
- State Key Laboratory of Information Photonics and Optical Communications
Publication Details
- Published
- 2024-10-25
- DOI
- https://doi.org/10.1109/icta64028.2024.10860686
- Primary Topic
- High voltage insulation and dielectric phenomena
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Fundamental Research Funds for the Central Universities