Mixed-dimensional Integration for Tetrachromatic Optoelectronic Synaptic Devices Based on 2D/3D WSe<sub>2</sub>-GaN

Mixed-dimensional heterostructures (MDHs) open up new opportunity for next-generation optoelectronic synaptic devices by simulating the integrated functions of the human visual system. In this work, we proposed a dual-channel WSe<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>/GaN 2D/3D integrated optoelectronic synaptic device exhibiting synaptic characteristics to broadband wavelengths in ultraviolet-visible range and demonstrating a comprehensive set of emulating basic optoelectronic synaptic characteristics. Notably, the device’s plasticity is tunable at different wavelengths, which is attributed to the different photogenerated carrier dynamics in the WSe<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>-GaN channel under ultraviolet and visible light stimulation. This work proposes a significant milestone of MDH-based artificial synapses solely utilizing their individual optoelectronic features, which is attractive toward scaled-up neuromorphic architectures.

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Published
2024-10-25
DOI
https://doi.org/10.1109/icta64028.2024.10860293
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
0.00

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article

Mixed-dimensional Integration for Tetrachromatic Optoelectronic Synaptic Devices Based on 2D/3D WSe2-GaN

Yong Yan, Zi-Jia Su, Haiding Sun, Huabin Yu et al.
Advanced Memory and Neural Computing
article

Mixed-dimensional Integration for Tetrachromatic Optoelectronic Synaptic Devices Based on 2D/3D WSe2-GaN

Yong Yan, Zi-Jia Su, Haiding Sun, Huabin Yu, Haocheng Zhang
article en

Abstract

Mixed-dimensional heterostructures (MDHs) open up new opportunity for next-generation optoelectronic synaptic devices by simulating the integrated functions of the human visual system. In this work, we proposed a dual-channel WSe<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>/GaN 2D/3D integrated optoelectronic synaptic device exhibiting synaptic characteristics to broadband wavelengths in ultraviolet-visible range and demonstrating a comprehensive set of emulating basic optoelectronic synaptic characteristics. Notably, the device’s plasticity is tunable at different wavelengths, which is attributed to the different photogenerated carrier dynamics in the WSe<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>-GaN channel under ultraviolet and visible light stimulation. This work proposes a significant milestone of MDH-based artificial synapses solely utilizing their individual optoelectronic features, which is attractive toward scaled-up neuromorphic architectures.

University of Science and Technology of China (CN)
National Natural Science Foundation of China, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 75%
Advanced Memory and Neural Computing
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