A 4-8 GHz Fully-Differential Noise Canceling Low Noise Amplifier in 55-nm CMOS
in this paper, a two-stage low noise amplifier(LNA) design is proposed in the 55 nm CMOS process that features a Fully-Differential noise canceling LNA(FD-NCLNA) structure as the first stage. The proposed LNA utilizes inductance to optimize gain and noise characteristics at high frequency and achieves a maximum gain of 18.4 dB and a minimum NF result of 2.5 dB within the $4-8 \mathrm{GHz}$ range.
Authors
- Zicheng Liu (ORCID: https://orcid.org/0000-0002-2342-2340)
- Fang Han (ORCID: https://orcid.org/0009-0008-9248-6795)
- Chao Wang (ORCID: https://orcid.org/0000-0002-4362-947X)
- Xiaoran Li (ORCID: https://orcid.org/0000-0002-2609-3554)
Institutions
- Beijing Institute of Technology (CN)
- Institute of Microelectronics (CN)
Publication Details
- Published
- 2024-10-25
- DOI
- https://doi.org/10.1109/icta64028.2024.10860708
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Beijing Institute of Technology