A 3.4 mW ± 0.45 dB-Gain-Variation 6-10GHz Low-Noise Amplifier with Embedded Capacitive Feedback and RC Extension Network for Gb/s UWB Receivers

This paper presents a wideband low-noise amplifier with flat in-band gain for 6-10 GHz ultra-wideband high data rate communication application. The embedded capacitive feedback technique is proposed to suppress the current dissipation and noise factor of the input transistor without additional power consumption. The proposed RC extension network provides an extra effective pole to realize wideband flat gain. Fabricated in 65nm CMOS, the LNA achieves a power gain of 12.2-13.1dB across 6-10GHz with ±0.45dB in-band gain variation and 4.3-5.7dB NF. It consumes 3.4mW from a 1.2V supply and occupies a compact die area of 0.094 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>.

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Published
2024-10-25
DOI
https://doi.org/10.1109/icta64028.2024.10860302
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
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article

A 3.4 mW ± 0.45 dB-Gain-Variation 6-10GHz Low-Noise Amplifier with Embedded Capacitive Feedback and RC Extension Network for Gb/s UWB Receivers

Woogeun Rhee, Zhihua Wang, Longhao Kuang
Radio Frequency Integrated Circuit Design
article

A 3.4 mW ± 0.45 dB-Gain-Variation 6-10GHz Low-Noise Amplifier with Embedded Capacitive Feedback and RC Extension Network for Gb/s UWB Receivers

Woogeun Rhee, Zhihua Wang, Longhao Kuang
article en

Abstract

This paper presents a wideband low-noise amplifier with flat in-band gain for 6-10 GHz ultra-wideband high data rate communication application. The embedded capacitive feedback technique is proposed to suppress the current dissipation and noise factor of the input transistor without additional power consumption. The proposed RC extension network provides an extra effective pole to realize wideband flat gain. Fabricated in 65nm CMOS, the LNA achieves a power gain of 12.2-13.1dB across 6-10GHz with ±0.45dB in-band gain variation and 4.3-5.7dB NF. It consumes 3.4mW from a 1.2V supply and occupies a compact die area of 0.094 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>.

Tsinghua University (CN)
Affordable and clean energy
Openalex Percentile: Top 75%
Radio Frequency Integrated Circuit Design
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