INVITED PAPER: A 21.5-to-37 GHz Series Doherty CMOS Power Amplifier with Distributed Multi-step Impedance Inverting Network Achieving 28.2%/23.2%/13.2% Peak/OP<sub>1dB</sub>/6dB<sub>PBO</sub> PAEs

A two-way series Doherty-PA(DPA) with a distributed impedance inverting network (IIN) for millimeter wave applications is presented in this paper. The proposed distributed IIN contributes to achieve wideband linear and PBO efficiency enhancement. Implemented in 65 nm bulk CMOS technology, this work realizes a measured 3 dB bandwidth of 15.5 GHz with 21.2 dB peak small-signal gain at $\mathbf{3 4. 2} \mathbf{G H z}$. Under $1-\mathrm{V}$ power supply, it achieves OP $_{1 \mathrm{~dB}}$ over 13.4 dBm and $P_{\text {sat }}$ over 16 dBm between 21-to-30 GHz. The measured maximum $P_{\text {sat }}$, $\mathbf{O P}_{1 \mathrm{~dB}}$, peak $/ \mathrm{OP}_{1 \mathrm{~dB}} / 6 \mathrm{~dB}_{\text {PBo }} \mathrm{PAE}$ results are $17.5 \mathrm{dBm}, 14.7 \mathrm{dBm}$, and $\mathbf{2 8. 2} \% / 23.2 \% / 13.2 \%$. This work achieves -28.25 dB and -20 dB EVM for a 200 MHz 64-QAM OFDM and a 2 GHz 16-QAM OFDM signals at $27 \mathbf{G H z}$ without DPD and equalization.

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Published
2024-10-25
DOI
https://doi.org/10.1109/icta64028.2024.10860595
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
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0.00

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article

INVITED PAPER: A 21.5-to-37 GHz Series Doherty CMOS Power Amplifier with Distributed Multi-step Impedance Inverting Network Achieving 28.2%/23.2%/13.2% Peak/OP1dB/6dBPBO PAEs

Baoyong Chi, Wei Deng, Junlong Gong, Haikun Jia et al.
Radio Frequency Integrated Circuit Design
article

INVITED PAPER: A 21.5-to-37 GHz Series Doherty CMOS Power Amplifier with Distributed Multi-step Impedance Inverting Network Achieving 28.2%/23.2%/13.2% Peak/OP1dB/6dBPBO PAEs

Baoyong Chi, Wei Deng, Junlong Gong, Haikun Jia, Xinyu Jiang
article en

Abstract

A two-way series Doherty-PA(DPA) with a distributed impedance inverting network (IIN) for millimeter wave applications is presented in this paper. The proposed distributed IIN contributes to achieve wideband linear and PBO efficiency enhancement. Implemented in 65 nm bulk CMOS technology, this work realizes a measured 3 dB bandwidth of 15.5 GHz with 21.2 dB peak small-signal gain at $\mathbf{3 4. 2} \mathbf{G H z}$. Under $1-\mathrm{V}$ power supply, it achieves OP $_{1 \mathrm{~dB}}$ over 13.4 dBm and $P_{\text {sat }}$ over 16 dBm between 21-to-30 GHz. The measured maximum $P_{\text {sat }}$, $\mathbf{O P}_{1 \mathrm{~dB}}$, peak $/ \mathrm{OP}_{1 \mathrm{~dB}} / 6 \mathrm{~dB}_{\text {PBo }} \mathrm{PAE}$ results are $17.5 \mathrm{dBm}, 14.7 \mathrm{dBm}$, and $\mathbf{2 8. 2} \% / 23.2 \% / 13.2 \%$. This work achieves -28.25 dB and -20 dB EVM for a 200 MHz 64-QAM OFDM and a 2 GHz 16-QAM OFDM signals at $27 \mathbf{G H z}$ without DPD and equalization.

Tsinghua University (CN)
National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 75%
Radio Frequency Integrated Circuit Design
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INVITED PAPER: A 21.5-to-37 GHz Series Doherty CMOS Power Amplifier with Distributed Multi-step Impedance Inverting Network Achieving 28.2%/23.2%/13.2% Peak/OP<sub>1dB</sub>/6dB<sub>PBO</sub> PAEs — Baoyong Chi, Wei Deng, et al. · (2024) | TGRS Research Map | TGRS