Hot Carrier Injection Induced Degradation of 14 nm FinFET under High Source-Drain Voltage Bias

In this work, the degradation of 14 nm FinFET under hot carrier injection (HCI) with high source-drain voltage was investigated. The key transport parameters before and after HCI were extracted from the experimental $I-V$ curves. The degradation laws of transport parameters with stress time and were studied and compared. The degradation of threshold voltage and effective DIBL is mainly controlled by oxide traps, and the degradation of subthreshold swing and mobility is mainly controlled by interface traps. The relationship between degradation rate and stress voltage is further analyzed.