Compact Model of Borophene Field Effect Transistors for Circuit Design

Benefiting from the high carrier mobility, the two-dimensional (2D) material borophene is promising to be used in high-speed applications. This paper investigates entirely the I/V characteristics of a borophene field-effect transistor (BFET) device and proposes a corresponding SPICE-compatible model for circuit design. Technology computer aided design (TCAD) tool is employed to investigate the I/V characteristics of BFET, including subthreshold swing (SS) and Ion/Ioff ratio. The simulation results show that the SS of BFET is lower than that of the conventional MOSFET while the Ion/Ioff ratio of BFET is higher. The electrical properties of BFET are integrated in a behavioral model for circuit design. The proposed model has been implemented in an inverter circuit to evaluate the performance improvement of BFET.