A Transient Switching Modeling Method for IGBT Based on Transfer Learning

This paper proposes an IGBT transient switching modeling approach based on transfer learning, designed to enhance modeling efficiency and accuracy while reducing reliance on extensive data and complex parameter extraction. The study uses two IGBT modules with similar specifications as case examples. Data under various operating conditions were collected using the industrial simulation tool L Tspice, resulting in a source dataset and a target dataset, with the target dataset comprising only 13.43% of the size of the source dataset. Initially, a Multi-Layer Perceptron (MLP) neural network is pre-trained on the source dataset to capture the fundamental switching behaviors of the IGBTs. Subsequently, the pre-trained model is fine-tuned through transfer learning to adapt it to the specific target IGBT module using the target dataset. The model's performance is evaluated using the relative root mean square error (RMSE). The results demonstrate that this method can accurately replicate IGBT transient switching characteristics with limited data, offering an efficient and robust solution for IGBT transient modeling in power electronic systems.

Authors

Institutions

Publication Details

Published
2024-11-22
DOI
https://doi.org/10.1109/icdsca63855.2024.10859973
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

A Transient Switching Modeling Method for IGBT Based on Transfer Learning

Anning Yu, Linmei Chen, Bo Zhou, Hang Wu et al.
Silicon Carbide Semiconductor Technologies
article

A Transient Switching Modeling Method for IGBT Based on Transfer Learning

Anning Yu, Linmei Chen, Bo Zhou, Hang Wu, Hao Xiang, Liao Zhang
article en

Abstract

This paper proposes an IGBT transient switching modeling approach based on transfer learning, designed to enhance modeling efficiency and accuracy while reducing reliance on extensive data and complex parameter extraction. The study uses two IGBT modules with similar specifications as case examples. Data under various operating conditions were collected using the industrial simulation tool L Tspice, resulting in a source dataset and a target dataset, with the target dataset comprising only 13.43% of the size of the source dataset. Initially, a Multi-Layer Perceptron (MLP) neural network is pre-trained on the source dataset to capture the fundamental switching behaviors of the IGBTs. Subsequently, the pre-trained model is fine-tuned through transfer learning to adapt it to the specific target IGBT module using the target dataset. The model's performance is evaluated using the relative root mean square error (RMSE). The results demonstrate that this method can accurately replicate IGBT transient switching characteristics with limited data, offering an efficient and robust solution for IGBT transient modeling in power electronic systems.

Chongqing University of Science and Technology (CN)
Openalex Percentile: Top 75%
Silicon Carbide Semiconductor Technologies
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

A Transient Switching Modeling Method for IGBT Based on Transfer Learning — Anning Yu, Linmei Chen, et al. · (2024) | TGRS Research Map | TGRS