A 50-Gbaud Linear Burst-Mode Trans-Impedance Amplifier in 28 nm CMOS Technology
this paper presents a 50-Gbaud linear burst-mode (BM) trans-impedance amplifier (TIA) implemented in $28-\mathrm{nm}$ bulk CMOS. Through the introduction of an auxiliary path and a high-speed offset-independent peak detector, the TIA incorporates a BM automatic gain control (AGC) system, capable of processing a 50-Gbaud ‘ 0101 ‘ pattern preamble. Additionally, a dual-mode structure is employed to extend the TIA’s dynamic range. Post-layout simulations demonstrate a dynamic range of 20 dB with a lock time of 100 ns. To the best of our knowledge, this is the first demonstration of a 50 -Gbaud linear BM TIA in CMOS technology.
Authors
- Ziyue Dang
- Daigao Chen
- Tianchi Ye (ORCID: https://orcid.org/0000-0001-8866-7093)
- Min Tan (ORCID: https://orcid.org/0000-0002-5531-6198)
- Xi Xiao (ORCID: https://orcid.org/0000-0002-6921-0669)
- Zhicheng Wang (ORCID: https://orcid.org/0000-0003-1726-9631)
- Hongguang Zhang (ORCID: https://orcid.org/0000-0002-6007-5907)
Institutions
- Huazhong University of Science and Technology (CN)
Publication Details
- Published
- 2024-10-25
- DOI
- https://doi.org/10.1109/icta64028.2024.10860567
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00