A Wide Dynamic Range Burst Mode Transimpedance Amplifier in BiCMOS Technology
This paper presents a burst mode transimpedance amplifier (BM-TIA) suitable for applications in passive optical network (PON). Hybrid automatic gain control (AGC) structure is employed to achieve high sensitivity of -33.5 dBm and wide dynamic range up to 26.5 dBm. Fabricated in $0.18-\mu \mathrm{m}$ SiGe BiCMOS process, the proposed BM-TIA achieves $76.94 \mathrm{~dB} \Omega$ transimpedance gain and a bandwidth of 7.4 GHz. It consumes 132 mW of power and occupies a chip area of $\mathbf{0. 9 2 2} \mathrm{mm}^{\mathbf{2}}$.
Authors
- Jiaqi Yang (ORCID: https://orcid.org/0000-0003-4974-5436)
- Xiaochao Ma (ORCID: https://orcid.org/0000-0003-2049-7467)
- Fujiang Lin (ORCID: https://orcid.org/0000-0001-9238-6737)
- Jianjun Yang (ORCID: https://orcid.org/0000-0002-1399-6340)
Institutions
- University of Science and Technology of China (CN)
Publication Details
- Published
- 2024-10-25
- DOI
- https://doi.org/10.1109/icta64028.2024.10860464
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00