A 92.9dB-SNDR 178.2dB-FoMs SAR ADC with kT/C noise cancellation and FIA

When designing high resolution ADCs, SAR ADCs face limitations due to sampling $\mathrm{kT} / \mathrm{C}$ noise. The input capacitor size has to be very large. This poses burdens for ADC driver, leading to huge power/area costs and design complexity. We introduce a SAR ADC with noise cancellation and FIA, a fully dynamic amplifier with high power efficiency. A 17-bit SAR ADC was fabricated using a 28 nm CMOS process with a 0.35 MHz bandwidth, achieving 92.9dB SNDR and 178.2dB FoMs in simulation.

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Publication Details

Published
2024-10-25
DOI
https://doi.org/10.1109/icta64028.2024.10860492
Citations
1
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.21

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article

A 92.9dB-SNDR 178.2dB-FoMs SAR ADC with kT/C noise cancellation and FIA

Lu Jie, Zijie Gao, Nan Sun, Yi Zhong
1 citations
Semiconductor materials and devices
0.21
article

A 92.9dB-SNDR 178.2dB-FoMs SAR ADC with kT/C noise cancellation and FIA

Lu Jie, Zijie Gao, Nan Sun, Yi Zhong
article en
1 citations

Abstract

When designing high resolution ADCs, SAR ADCs face limitations due to sampling $\mathrm{kT} / \mathrm{C}$ noise. The input capacitor size has to be very large. This poses burdens for ADC driver, leading to huge power/area costs and design complexity. We introduce a SAR ADC with noise cancellation and FIA, a fully dynamic amplifier with high power efficiency. A 17-bit SAR ADC was fabricated using a 28 nm CMOS process with a 0.35 MHz bandwidth, achieving 92.9dB SNDR and 178.2dB FoMs in simulation.

Tsinghua University (CN)
Beijing Innovation Center for Future Chip
Affordable and clean energy
Openalex Percentile: Top 44%
Semiconductor materials and devices
0.21
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