Performance Optimization of CIGS-based Photovoltaic Cells under Varied Temperature Conditions using SCAPS Simulation

Solar cells are constructed using semiconductors that have undergone demanding research and development. At now, the preferred material used for making photovoltaic (PV) cells is Silicon (Si), which makes up over 80% of worldwide output. Si-based compounds seem inferior to other compounds based on the CIS family due to their expensive operation and manufacturing methods. Some materials can significantly absorb the sun's light. Furthermore, CIGS has attained a heightened degree of efficiency, making it the ideal material for maximizing the power conversion efficiency (PCE) of thin-film technologies. To optimize the effectiveness of PV cells, use the SCAPS tool. This study involves the use of CIGS-based PV cells, where the temperature is systematically altered in 10 increments, ranging from 250 to 350 K. Fluctuations in temperature in controlled experiments allow for targeted examinations of the performance of materials under varying temperature circumstances. The results provide useful insights for improving the structure and efficiency of CIGS solar cells, thereby increasing the production of sustainable energy. The PV parameters at a temperature of 250K are as follows: The PCE of the CIGS-based PV cells is 27.11%. The V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OC</inf> (Open Circuit Voltage) is 0.73 V, the J<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SC</inf> (Short Circuit Current Density) is 42.9 mA/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>, and the FF (Fill Factor) is 86.11%. These values provide valuable insights for the advancement and enhancement of CIGS-based PV cells.