Ultra‐Sensitive Short‐Wave Infrared Single‐Photon Detection Using a Silicon Single‐Electron Transistor

Abstract Ultra‐sensitive short‐wave infrared (SWIR) photon detection is a crucial aspect of ongoing research in quantum technology. However, developing such detectors on a CMOS‐compatible silicon technological platform has been challenging due to the low absorption coefficient for silicon in the SWIR range. In this study, a codoped silicon‐based single‐electron transistor (SET) in a silicon‐on‐insulator field‐effect transistor (SOI‐FET) configuration is fabricated, which successfully detects single photons in the SWIR range with ultra‐high sensitivity. The detection mechanism is evidenced by the shift in the onset of the SET current peaks and by the occurrence of random telegraph signals (RTS) under light irradiation, as compared to the dark condition. The calculated sensitivity of our device, in terms of noise equivalent power (NEP), is ≈10 −19 W Hz −1/2 .