Preparation of Copper Antimony Sulfide Thin Film Solar Cells by Chemical Synthesis

<div class="section abstract"><div class="htmlview paragraph">Copper Antimony Sulfide (CuSbS<sub>2</sub>) is a promising ternary semiconductor for use as an absorber layer in third-generation thin film heterojunction solar cells. This newly developed optoelectronic material offers a viable alternative to cadmium telluride (CdTe) and copper indium gallium di-selenide (Cu(In,Ga)Se<sub>2</sub>) due to its composition of inexpensive, readily available, and non-toxic elements. These films were successfully produced at an optimal substrate temperature of 533 K using the conventional spray technique. X-ray diffraction and Raman studies confirm that the films exhibit a chalcostibite structure. Characterization studies reveal that the films possess lattice parameters of a = 0.60 nm, b = 0.38 nm, and c = 1.45 nm, with an absorption coefficient of 10<sup>5</sup> cm<sup>-1</sup> and a band gap of 1.50 eV. Notably, the films exhibit p-type conductivity. All of these studies confirm that CuSbS<sub>2</sub> is an excellent choice for the absorber layer in solar cell applications. An attempt was made in this study to improve the crystallinity of the CuSbS<sub>2</sub> films by different experimental conditions. (i) CuSbS<sub>2</sub> films have been fabricated using two different carrier gases (air and nitrogen) via chemical spray pyrolytic technique. (ii) To enhance the crystallinity of these films, spray pyrolytic films have been kept on the hot plate at optimal substrate temperature for about 15 minutes. Subsequently, a CuSbS<sub>2</sub> solar cell is developed entirely through the non-vacuum method. The absorber layer is fabricated by using the spray pyrolytic method. A n-CdS buffer layer is successfully deposited via the chemical bath technique. The cell’s efficiency increased from 0.488% to 0.54% when the absorber layer in the solar cell was left on hot substrates for about 15 minutes following the pyrolytic reaction. The study discusses how these techniques contribute to improving the efficiency of the solar cell parameters.</div></div>

Authors

Publication Details

Journal
SAE technical papers on CD-ROM/SAE technical paper series
Published
2025-02-06
DOI
https://doi.org/10.4271/2025-28-0117
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Preparation of Copper Antimony Sulfide Thin Film Solar Cells by Chemical Synthesis

Hariprasad Tarigonda, Kiran Yb, Surya Sekhar Reddy M, YB Kishore Kumar
SAE technical papers on CD-ROM/SAE technical paper series
Chalcogenide Semiconductor Thin Films
article

Preparation of Copper Antimony Sulfide Thin Film Solar Cells by Chemical Synthesis

Hariprasad Tarigonda, Kiran Yb, Surya Sekhar Reddy M, YB Kishore Kumar
article en

Abstract

<div class="section abstract"><div class="htmlview paragraph">Copper Antimony Sulfide (CuSbS<sub>2</sub>) is a promising ternary semiconductor for use as an absorber layer in third-generation thin film heterojunction solar cells. This newly developed optoelectronic material offers a viable alternative to cadmium telluride (CdTe) and copper indium gallium di-selenide (Cu(In,Ga)Se<sub>2</sub>) due to its composition of inexpensive, readily available, and non-toxic elements. These films were successfully produced at an optimal substrate temperature of 533 K using the conventional spray technique. X-ray diffraction and Raman studies confirm that the films exhibit a chalcostibite structure. Characterization studies reveal that the films possess lattice parameters of a = 0.60 nm, b = 0.38 nm, and c = 1.45 nm, with an absorption coefficient of 10<sup>5</sup> cm<sup>-1</sup> and a band gap of 1.50 eV. Notably, the films exhibit p-type conductivity. All of these studies confirm that CuSbS<sub>2</sub> is an excellent choice for the absorber layer in solar cell applications. An attempt was made in this study to improve the crystallinity of the CuSbS<sub>2</sub> films by different experimental conditions. (i) CuSbS<sub>2</sub> films have been fabricated using two different carrier gases (air and nitrogen) via chemical spray pyrolytic technique. (ii) To enhance the crystallinity of these films, spray pyrolytic films have been kept on the hot plate at optimal substrate temperature for about 15 minutes. Subsequently, a CuSbS<sub>2</sub> solar cell is developed entirely through the non-vacuum method. The absorber layer is fabricated by using the spray pyrolytic method. A n-CdS buffer layer is successfully deposited via the chemical bath technique. The cell’s efficiency increased from 0.488% to 0.54% when the absorber layer in the solar cell was left on hot substrates for about 15 minutes following the pyrolytic reaction. The study discusses how these techniques contribute to improving the efficiency of the solar cell parameters.</div></div>

SAE technical papers on CD-ROM/SAE technical paper seriesVol. 1
Openalex Percentile: Top 98%
Chalcogenide Semiconductor Thin Films
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.