Critical band-to-band-tunnelling based optoelectronic memory

Neuromorphic vision hardware, embedded with multiple functions, has recently emerged as a potent platform for machine vision. To realize memory in sensor functions, reconfigurable and non-volatile manipulation of photocarriers is highly desirable. However, previous technologies bear mechanism challenges, such as the ambiguous optoelectronic memory mechanism and high potential barrier, resulting in a limited response speed and a high operating voltage. Here, for the first time, we propose a critical band-to-band tunnelling (BTBT) based device that combines sensing, integration and memory functions. The nearly infinitesimal barrier facilitates the tunnelling process, resulting in a broadband application range (940 nm). Furthermore, the observation of dual negative differential resistance (NDR) points confirms that the critical BTBT of photocarriers contributes to the sub-microsecond photomemory speed. Since the photomemory speed, with no motion blur, is important for motion detection, the critical BTBT memory is expected to enable moving target tracking and recognition, underscoring its superiority in intelligent perception.

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Publication Details

Journal
Light Science & Applications
Published
2025-02-07
DOI
https://doi.org/10.1038/s41377-025-01756-7
Citations
15
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
10.96

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Critical band-to-band-tunnelling based optoelectronic memory

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Critical band-to-band-tunnelling based optoelectronic memory

Tangxin Li, Johnny Chung Yin Ho, Jinshui Miao, Haonan Ge, Weida Hu, Hangyu Xu, Peng Zhou, Min Luo, Xiao Fu, Xiaomeng Shi, Runzhang Xie, Fang Wang, Jinjin Wang, Zhenhan Zhang
article en
15 citations

Abstract

Neuromorphic vision hardware, embedded with multiple functions, has recently emerged as a potent platform for machine vision. To realize memory in sensor functions, reconfigurable and non-volatile manipulation of photocarriers is highly desirable. However, previous technologies bear mechanism challenges, such as the ambiguous optoelectronic memory mechanism and high potential barrier, resulting in a limited response speed and a high operating voltage. Here, for the first time, we propose a critical band-to-band tunnelling (BTBT) based device that combines sensing, integration and memory functions. The nearly infinitesimal barrier facilitates the tunnelling process, resulting in a broadband application range (940 nm). Furthermore, the observation of dual negative differential resistance (NDR) points confirms that the critical BTBT of photocarriers contributes to the sub-microsecond photomemory speed. Since the photomemory speed, with no motion blur, is important for motion detection, the critical BTBT memory is expected to enable moving target tracking and recognition, underscoring its superiority in intelligent perception.

Light Science & ApplicationsVol. 14(1)
Tongji University (CN), City University of Hong Kong (HK), Fudan University (CN), Shanghai Fudan Microelectronics (China) (CN), Shanghai Institute of Technical Physics (CN), University of Chinese Academy of Sciences (CN)
National Natural Science Foundation of China
Openalex Percentile: Top 2%
Advanced Memory and Neural Computing
10.96
DOIOpen Access PDFOpenAlex
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