AIGaN-Based DUV Micro-PDs and Micro-LEDs: Achieving Superior Emission and Detection Performance Simultaneously
Advancements in miniaturized optoelectronic devices are crucial for the next generation of lighting, imaging, communication, and sensing technologies. This paper presents a novel micro dual-function diode (DF-diode) that combines light emission and detection capabilities. The DF-diode achieves record-high responsivity in detection mode, with a $300 \mathrm{~mA} / \mathrm{W}$ at 265 nm and a swift 3.7 ns response time. In emission mode, it boasts a −3 dB optical bandwidth surpassing 585 MHz and enhanced external quantum efficiency, showcasing its potential for high-speed and efficient optoelectronic applications.
Authors
- Haiding Sun (ORCID: https://orcid.org/0000-0001-8664-666X)
- Huabin Yu (ORCID: https://orcid.org/0000-0003-2487-2076)
- Muhammad Hunain Memon (ORCID: https://orcid.org/0000-0002-3970-8925)
- Rui Wang (ORCID: https://orcid.org/0009-0001-9020-4984)
Institutions
- University of Science and Technology of China (CN)
Publication Details
- Published
- 2024-10-25
- DOI
- https://doi.org/10.1109/icta64028.2024.10860312
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00