A 0.8-V-VIN 3.76-nW 23.1-ppm/°C Low Dropout Regulator Based on Flipped Voltage Follower with Embedded CMOS Voltage Reference
This brief presents an ultra-low power sub-threshold low-dropout (LDO) regulator based on a cascode flipped voltage follower (FVF) with an embedded CMOS voltage reference (ECVR), implemented in $0.18-\mu \mathrm{m}$ CMOS technology. The LDO integrates temperature compensation mechanisms into the regulation loop, including a complementary-to-absolute-temperature (CTAT) voltage generator and a proportional-to-absolute-temperature (PTAT) voltage generator. Therefore, the regulator achieves an output voltage of 0.6 V with a temperature coefficient of $23.1 \mathrm{ppm} /^{\circ} \mathrm{C}$ over a temperature range of $-40^{\circ} \mathrm{C}$ to $125^{\circ} \mathrm{C}$, eliminating the need for an additional voltage reference circuit. This design approach effectively reduces both chip area and power consumption. The LDO maintains stability without an output capacitor and supports a maximum load current of 10 mA. Additionally, it operates with a minimum supply voltage as low as 0.8V while consuming only 3.76 nW of total power.
Authors
- Bing Ren (ORCID: https://orcid.org/0000-0003-0276-8577)
- Chenchang Zhan (ORCID: https://orcid.org/0000-0002-4878-4655)
- Fujun Liu (ORCID: https://orcid.org/0000-0002-8924-8488)
Institutions
- Southern University of Science and Technology (CN)
Publication Details
- Published
- 2024-10-25
- DOI
- https://doi.org/10.1109/icta64028.2024.10860315
- Citations
- 1
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.21