A 0.8-V-VIN 3.76-nW 23.1-ppm/°C Low Dropout Regulator Based on Flipped Voltage Follower with Embedded CMOS Voltage Reference

This brief presents an ultra-low power sub-threshold low-dropout (LDO) regulator based on a cascode flipped voltage follower (FVF) with an embedded CMOS voltage reference (ECVR), implemented in $0.18-\mu \mathrm{m}$ CMOS technology. The LDO integrates temperature compensation mechanisms into the regulation loop, including a complementary-to-absolute-temperature (CTAT) voltage generator and a proportional-to-absolute-temperature (PTAT) voltage generator. Therefore, the regulator achieves an output voltage of 0.6 V with a temperature coefficient of $23.1 \mathrm{ppm} /^{\circ} \mathrm{C}$ over a temperature range of $-40^{\circ} \mathrm{C}$ to $125^{\circ} \mathrm{C}$, eliminating the need for an additional voltage reference circuit. This design approach effectively reduces both chip area and power consumption. The LDO maintains stability without an output capacitor and supports a maximum load current of 10 mA. Additionally, it operates with a minimum supply voltage as low as 0.8V while consuming only 3.76 nW of total power.

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Published
2024-10-25
DOI
https://doi.org/10.1109/icta64028.2024.10860315
Citations
1
Primary Topic
Thin-Film Transistor Technologies
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article
Field-Weighted Citation Impact
0.21
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article

A 0.8-V-VIN 3.76-nW 23.1-ppm/°C Low Dropout Regulator Based on Flipped Voltage Follower with Embedded CMOS Voltage Reference

Bing Ren, Chenchang Zhan, Fujun Liu
1 citations
Thin-Film Transistor Technologies
0.21
article

A 0.8-V-VIN 3.76-nW 23.1-ppm/°C Low Dropout Regulator Based on Flipped Voltage Follower with Embedded CMOS Voltage Reference

Bing Ren, Chenchang Zhan, Fujun Liu
article en
1 citations

Abstract

This brief presents an ultra-low power sub-threshold low-dropout (LDO) regulator based on a cascode flipped voltage follower (FVF) with an embedded CMOS voltage reference (ECVR), implemented in $0.18-\mu \mathrm{m}$ CMOS technology. The LDO integrates temperature compensation mechanisms into the regulation loop, including a complementary-to-absolute-temperature (CTAT) voltage generator and a proportional-to-absolute-temperature (PTAT) voltage generator. Therefore, the regulator achieves an output voltage of 0.6 V with a temperature coefficient of $23.1 \mathrm{ppm} /^{\circ} \mathrm{C}$ over a temperature range of $-40^{\circ} \mathrm{C}$ to $125^{\circ} \mathrm{C}$, eliminating the need for an additional voltage reference circuit. This design approach effectively reduces both chip area and power consumption. The LDO maintains stability without an output capacitor and supports a maximum load current of 10 mA. Additionally, it operates with a minimum supply voltage as low as 0.8V while consuming only 3.76 nW of total power.

Southern University of Science and Technology (CN)
Affordable and clean energy
Openalex Percentile: Top 44%
Thin-Film Transistor Technologies
0.21
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