Electronic Noise Considerations for Designing Integrated Solid‐State Quantum Memories

Abstract As quantum networks expand and are deployed outside research laboratories, a need arises to design and integrate compact control electronics for each memory node. It is essential to understand the performance requirements for such systems, especially concerning tolerable levels of noise, since these specifications dramatically affect a system's design complexity and cost. Here, using an approach that can be easily generalized across quantum‐hardware platforms, a case study based on nitrogen‐vacancy (NV) centers in diamond is presented. The effects of phase noise and timing jitter in the control system in conjunction are modeled and experimentally verified with the spin qubit's environmental noise. The impact of different phase noise characteristics on the fidelity of dynamical decoupling sequences is also considered. The results demonstrate a procedure to specify design requirements for integrated quantum control signal generators for solid‐state spin qubits, depending on their coherence time, intrinsic noise spectrum, and required fidelity.