Material-oriented modeling of quantum many-body effects in a monolayer transition metal dichalcogenide nanolaser device

Monolayer transition metal dichalcogenides are a notable option as a gain material in future optoelectronic devices, in particular as source of stimulated emission. Here, the authors report a fully quantum mechanical theory to microscopically investigate the interplay of the efficient light-matter interaction and many-body effects in an MoS${}_{2}$ monolayer nanolaser operating at room temperature. The key finding is that such devices are capable of establishing stable gain phases for electron-hole-plasma-based lasing occurring at excited carrier densities above $5\ifmmode\times\else\texttimes\fi{}{10}^{13}\phantom{\rule{0.167em}{0ex}}{\text{cm}}^{\ensuremath{-}2}$.