Electrically pumped laser oscillation of C-band InAs quantum dot vertical-cavity surface-emitting lasers on InP(311)B substrate
We report, for the first time to the best of our knowledge, the demonstration of electrically pumped laser oscillation of C-band InAs quantum dot vertical-cavity surface-emitting lasers (QD VCSELs), fabricated on InP(311)B substrates by applying a strain compensation technique. Under room-temperature pulsed operation, these devices exhibit a threshold current of 13 mA, with an output power of 0.17 mW at 25 mA. Notably, the emitted light displays linear polarization oriented along the InP[-233] direction. These QD VCSELs exhibit remarkable potential as light sources for optical communication transceivers.
Authors
- Hiroshi Nakajima (ORCID: https://orcid.org/0000-0002-0366-5468)
- Yudai Yamaguchi (ORCID: https://orcid.org/0000-0002-5944-2909)
- Michinori Shiomi
- Naokatsu Yamamoto
- Daiji Kasahara
- Mikihiro Yokozeki
- Yuya Kanitani (ORCID: https://orcid.org/0009-0002-2154-5571)
- Noriyuki Futagawa
- Ryoji Arai
- Kouichi Akahane (ORCID: https://orcid.org/0000-0002-8919-1717)
- M. Tanaka (ORCID: https://orcid.org/0000-0002-4697-894X)
- Masashi Takanohashi
- Yoshihiro Kudo
- Yuta Inaba
- Tomomasa Watanabe
- Haruki Kishimoto
Institutions
- National Institute of Information and Communications Technology (JP)
Publication Details
- Journal
- Optics Express
- Published
- 2025-02-05
- DOI
- https://doi.org/10.1364/oe.551300
- Citations
- 2
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 1.46