One-shot nanoscale surface height variation measurement of a bare silicon wafer using a single reflectance direction field
It has been demonstrated that nanoscale height variations on a bare silicon wafer can be reconstructed from a single image obtained in one shot using a color mapping imaging system of a reflectance direction field. This imaging system can acquire the direction of light rays reflected from the wafer's surface as color information by utilizing a filter with a multicolor stripe pattern. A prototype of the imaging system is capable of capturing an image of a 12 × 8 mm area of the silicon wafer with a resolution of 2.18 × 2.18 µm. The height error distribution in the reconstruction from the ideal surface varies between -18% and 6%.
Authors
- Hideaki Okano
- Hiroya Kano
- Hiroshi Ohno (ORCID: https://orcid.org/0000-0002-8267-6156)
- Kōki Takanashi (ORCID: https://orcid.org/0000-0003-4813-4641)
- Takahiro Kamikawa
- Ohno Akira
Institutions
- Toshiba (Japan) (JP)
Publication Details
- Journal
- Optics Continuum
- Published
- 2025-02-05
- DOI
- https://doi.org/10.1364/optcon.541291
- Primary Topic
- Advanced Surface Polishing Techniques
- Type
- article
- Field-Weighted Citation Impact
- 0.00