Constructing topological insulator-ferromagnet heterojunctions of Bi<sub>2</sub>Se<sub>3</sub>/Fe<sub>3</sub>GeTe<sub>2</sub> and Bi<sub>2</sub>Te<sub>3</sub>/Fe<sub>3</sub>GaTe<sub>2</sub>

Heterostructures composed of topological insulators and ferromagnets are predicted to exhibit the quantum anomalous Hall effect (QAHE). The morphology and interfacial structure have a significant impact on physical properties and transport performances of such heterostructures. Here, we report the epitaxial growth of topological insulators Bi<sub>2</sub>Se<sub>3</sub>and Bi<sub>2</sub>Te<sub>3</sub>thin films on ferromagnetic substrates of Fe<sub>3</sub>GeTe<sub>2</sub>and Fe<sub>3</sub>GaTe<sub>2</sub>, respectively. The morphology and composition of the Bi<sub>2</sub>Se<sub>3</sub>and Bi<sub>2</sub>Te<sub>3</sub>thin films were characterized using atomic force microscopy, x-ray photoelectron spectroscopy and Raman spectroscopy. After optimizing growth parameters, we successfully generated large-area films with high crystallinity, presenting new types of topological insulator-ferromagnet heterojunctions for the pursuit of QAHE.

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Publication Details

Journal
Journal of Physics Condensed Matter
Published
2025-02-05
DOI
https://doi.org/10.1088/1361-648x/adb274
Citations
2
Primary Topic
Topological Materials and Phenomena
Type
article
Field-Weighted Citation Impact
2.49

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Constructing topological insulator-ferromagnet heterojunctions of Bi2Se3/Fe3GeTe2 and Bi2Te3/Fe3GaTe2

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2 citations
Journal of Physics Condensed Matter
Topological Materials and Phenomena
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article

Constructing topological insulator-ferromagnet heterojunctions of Bi2Se3/Fe3GeTe2 and Bi2Te3/Fe3GaTe2

Tingting Yang, Peiyao Xiao, Fuhong Chen, Wende Xiao, Zhiwei Wang, Yang Liu, Yuxiang Liu, X. Liang
article en
2 citations

Abstract

Heterostructures composed of topological insulators and ferromagnets are predicted to exhibit the quantum anomalous Hall effect (QAHE). The morphology and interfacial structure have a significant impact on physical properties and transport performances of such heterostructures. Here, we report the epitaxial growth of topological insulators Bi<sub>2</sub>Se<sub>3</sub>and Bi<sub>2</sub>Te<sub>3</sub>thin films on ferromagnetic substrates of Fe<sub>3</sub>GeTe<sub>2</sub>and Fe<sub>3</sub>GaTe<sub>2</sub>, respectively. The morphology and composition of the Bi<sub>2</sub>Se<sub>3</sub>and Bi<sub>2</sub>Te<sub>3</sub>thin films were characterized using atomic force microscopy, x-ray photoelectron spectroscopy and Raman spectroscopy. After optimizing growth parameters, we successfully generated large-area films with high crystallinity, presenting new types of topological insulator-ferromagnet heterojunctions for the pursuit of QAHE.

Journal of Physics Condensed MatterVol. 37(15)
Beijing Institute of Technology (CN)
National Natural Science Foundation of China, National Key Research and Development Program of China
Openalex Percentile: Top 14%
Topological Materials and Phenomena
2.49
DOISourceOpenAlex
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