Advanced Techniques for the Fabrication of Nanostructured Porous Silicon Using Photoelectrochemical Etching and Ultrasonic Vibration

This study presents a novel method combining photoelectrochemical etching with ultrasonic vibration for the formation of nanocrystalline porous silicon (NC-PS). This combined process enhances the band gap energy absorption (BEA) by reducing bubble accumulation in the etching area. It is found that laser irradiation can decrease the etching rate, while ultrasonic vibration aids with bubble expulsion, preventing accumulation in the etching area, resulting in more uniform etching and increasing the porosity of the porous silicon (PS). High porosity in NC-PS structures enhances the surface area, thereby increasing electron mobility and improving the electron energy distribution. Our experiments demonstrate that this combined process leads to more uniform and deeper etching and the creation of well-defined porous structures. The more uniform PS size distribution (8–14 nm) achieved by photoelectrochemical etching combined with ultrasonic vibration enhances the optical properties of the material due to quantum confinement effects. Porosity measurements provide essential surface characterization information that is crucial for determining the performance of PS diode components in various applications. Our findings demonstrate that this combination technique improves the uniformity, efficiency, and precision of porous silicon etching, producing material for high-performance applications, including sensors, catalysts, and photonic devices.