Charge collection properties of a CMOS sensor produced in a 55 nm process
Abstract We present the design and preliminary test results of a MAPS sensor, MIC6_Explorer1, based on a 55 nm Quad-well CMOS Image Sensor process for high-energy physics experiment vertex detector applications. MIC6_Explorer1 consists of three large matrices and is designed to investigate the charge collection properties of the 55 nm process with various MAPS design parameters, including pixel pitch, diode geometry, reset methods, and readout circuit structure. Preliminary test results demonstrate that the pixel array with a 24 μm × 24 μm pitch achieved a 93.5% charge collection efficiency when exposed to a 55 Fe source.
Authors
- Wenjie Dai
- Guangming Huang (ORCID: https://orcid.org/0000-0002-7950-2024)
- Guoxiang Zhang
- Le Xiao (ORCID: https://orcid.org/0009-0002-9490-1186)
- Zijie Zhou
- Kai Chen (ORCID: https://orcid.org/0009-0004-9827-2692)
- C. Gao (ORCID: https://orcid.org/0009-0004-0482-2578)
- Yang Zhou (ORCID: https://orcid.org/0000-0002-5037-7645)
- Y. Lu (ORCID: https://orcid.org/0000-0001-9070-5458)
- Ying Zhang (ORCID: https://orcid.org/0000-0003-3946-8041)
- Lirong Xie
- Xiangming Sun (ORCID: https://orcid.org/0009-0007-7809-4632)
Institutions
- Guangxi University (CN)
- Central China Normal University (CN)
- Institute of High Energy Physics (CN)
Publication Details
- Journal
- Journal of Instrumentation
- Published
- 2025-02-01
- DOI
- https://doi.org/10.1088/1748-0221/20/02/c02008
- Primary Topic
- Particle Detector Development and Performance
- Type
- article
- Field-Weighted Citation Impact
- 0.00