Sensing an alternating-current signal beyond the cutoff frequency using a single-electron dynamic random-access memory

Single-electron devices are critical for quantum computing and precision sensing, but are limited by high resistance and slow operation. This study applies a nonequilibrium-thermodynamics approach to a nanoscale dynamic random-access memory (DRAM) device monitoring a small number of electrons, enabling it to detect high-frequency signals up to six orders of magnitude higher than the DRAM's cutoff frequency. These insights could advance high-sensitivity sensors and electronic systems, as well as offer avenues for designing low-consumption, high-frequency sensors.