Intrinsic Nonlinear Spin Hall Effect and Manipulation of Perpendicular Magnetization

We propose an intrinsic nonlinear spin Hall effect, which enables the generation of collinearly polarized spin current in a large class of nonmagnetic materials with the corresponding linear response being symmetry forbidden. This opens a new avenue for field-free switching of perpendicular magnetization, which is required for the next-generation information storage technology. We develop the microscopic theory of this effect and clarify its quantum origin in band geometric quantities which can be enhanced by topological nodal features. Combined with first-principles calculations, we predict pronounced effects at room temperature in topological metals PbTaSe_{2} and PdGa. Our work establishes a fundamental nonlinear response in spin transport and opens the door to exploring spintronic applications based on nonlinear spin Hall effect.

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Publication Details

Journal
Physical Review Letters
Published
2025-02-05
DOI
https://doi.org/10.1103/physrevlett.134.056301
Citations
8
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
9.97

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article

Intrinsic Nonlinear Spin Hall Effect and Manipulation of Perpendicular Magnetization

Xukun Feng, Shengyuan A. Yang, Cong Xiao, Hui Wang et al.
8 citations
Physical Review Letters
Magnetic properties of thin films
9.97
article

Intrinsic Nonlinear Spin Hall Effect and Manipulation of Perpendicular Magnetization

Xukun Feng, Shengyuan A. Yang, Cong Xiao, Hui Wang, Shen Lai, Weibo Gao, Weikang Wu, Jin Cao, Huiying Liu
article en
8 citations

Abstract

We propose an intrinsic nonlinear spin Hall effect, which enables the generation of collinearly polarized spin current in a large class of nonmagnetic materials with the corresponding linear response being symmetry forbidden. This opens a new avenue for field-free switching of perpendicular magnetization, which is required for the next-generation information storage technology. We develop the microscopic theory of this effect and clarify its quantum origin in band geometric quantities which can be enhanced by topological nodal features. Combined with first-principles calculations, we predict pronounced effects at room temperature in topological metals PbTaSe_{2} and PdGa. Our work establishes a fundamental nonlinear response in spin transport and opens the door to exploring spintronic applications based on nonlinear spin Hall effect.

Physical Review LettersVol. 134(5)
Singapore University of Technology and Design (SG), Shandong University (CN), National University of Singapore (SG), Nanyang Technological University (SG), University of Macau (MO), Fudan University (CN), Beihang University (CN)
National Research Foundation Singapore, Ministry of Education - Singapore, National Natural Science Foundation of China, Natural Science Foundation of Shandong Province, National Key Research and Development Program of China
Openalex Percentile: Top 2%
Magnetic properties of thin films
9.97
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