An 800-MHz 8.17-TOPS/W 0.63-TOPS/mm <sup>2</sup> Memory-Utilization-Aware CNN Accelerator Featuring a Memory Stationary Dataflow

Increasing the on-chip memory utilization (OCMU) is crucial for an area-efficient deep neural network accelerator. We propose a memory stationary (MS) dataflow to ingeniously combine the input and output features in a single memory block in a cyclic manner, significantly increasing the OCMU. The MS dataflow also reduces the feature memory access by 78.0%. Furthermore, residual paths in a ResNet model require large feature buffering. We introduce layer-wise clipped-asymmetric residual distillation (LCARD) quantization, removing the residual paths with minimal accuracy degradation. It dynamically assigns different feature/weight bit-widths for different layers, further enhancing the OCMU by <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$3.2{\times }$ </tex-math></inline-formula> and throughput by <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$4.5{\times }$ </tex-math></inline-formula> from a fixed bit-width (FBW) approach. We also present an MS gating (MSG) to skip the ineffective channels that improve the OCMU by <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.2{\times }$ </tex-math></inline-formula> and throughput by <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.3{\times }$ </tex-math></inline-formula>. Fabricated in a 28-nm CMOS process, the proposed accelerator exhibits an 8.17-TOPS/W peak energy efficiency and a 0.63-TOPS/mm2 peak area efficiency at 800 MHz and 0.9 V while requiring only a 120 kB on-chip static random-access memory (SRAM) for the ResNet-50.

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Publication Details

Journal
IEEE Journal of Solid-State Circuits
Published
2025-02-05
DOI
https://doi.org/10.1109/jssc.2025.3532544
Citations
2
Primary Topic
CCD and CMOS Imaging Sensors
Type
article
Field-Weighted Citation Impact
1.46

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article

An 800-MHz 8.17-TOPS/W 0.63-TOPS/mm 2 Memory-Utilization-Aware CNN Accelerator Featuring a Memory Stationary Dataflow

Ka-Fai Un, Pui‐In Mak, Jixuan Li, Wei-Han Yu et al.
2 citations
IEEE Journal of Solid-State Circuits
CCD and CMOS Imaging Sensors
1.46
article

An 800-MHz 8.17-TOPS/W 0.63-TOPS/mm 2 Memory-Utilization-Aware CNN Accelerator Featuring a Memory Stationary Dataflow

Ka-Fai Un, Pui‐In Mak, Jixuan Li, Wei-Han Yu, Ke Li, Rui P. Martins
article en
2 citations

Abstract

Increasing the on-chip memory utilization (OCMU) is crucial for an area-efficient deep neural network accelerator. We propose a memory stationary (MS) dataflow to ingeniously combine the input and output features in a single memory block in a cyclic manner, significantly increasing the OCMU. The MS dataflow also reduces the feature memory access by 78.0%. Furthermore, residual paths in a ResNet model require large feature buffering. We introduce layer-wise clipped-asymmetric residual distillation (LCARD) quantization, removing the residual paths with minimal accuracy degradation. It dynamically assigns different feature/weight bit-widths for different layers, further enhancing the OCMU by <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$3.2{\times }$ </tex-math></inline-formula> and throughput by <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$4.5{\times }$ </tex-math></inline-formula> from a fixed bit-width (FBW) approach. We also present an MS gating (MSG) to skip the ineffective channels that improve the OCMU by <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.2{\times }$ </tex-math></inline-formula> and throughput by <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.3{\times }$ </tex-math></inline-formula>. Fabricated in a 28-nm CMOS process, the proposed accelerator exhibits an 8.17-TOPS/W peak energy efficiency and a 0.63-TOPS/mm2 peak area efficiency at 800 MHz and 0.9 V while requiring only a 120 kB on-chip static random-access memory (SRAM) for the ResNet-50.

IEEE Journal of Solid-State CircuitsVol. 60(8)
University of Macau (MO), Institute of Microelectronics (CN)
Universidade de Macau
Openalex Percentile: Top 20%
CCD and CMOS Imaging Sensors
1.46
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