A Monolithic Ultrawideband Reconfigurable Dual-Mode Transceiver Front-End Functioning From 0.8 to 18 GHz in GaAs Technology

This article presents a monolithic 0.8- to 18-GHz reconfigurable dual-mode transceiver (TRX) design with direction and conversion functions. In the direction mode, the TRX processes the signals in a frequency range from 0.8 to 5 GHz. In the conversion mode, it up-converts or down-converts the signals at a frequency from 4.5 to 18 GHz. An overlap of 0.5 GHz exists in the two modes, so that the TRX will be flexible in frequencies from 4.5 to 5 GHz. The receiver (RX) deploys a distributed low-noise amplifier (LNA), three driven amplifiers, a down-conversion mixer, a tunable low-pass filter (LPF), a variable gain amplifier (VGA), and two single-pole-double-throw (SPDT) switches. The transmitter (TX) consists of a VGA, an up-conversion mixer, a reconfigurable distributed power amplifier (PA), three driven amplifiers, and two SPDT switches. In the RX, the two modes share the usage of LNA, tunable LPF, and VGA. Similarly, the two modes of TX share the usage of VGA and PA. Moreover, the PA is designed using reconfigurable bias inductors (INDs) to enhance power efficiency, which is also critical for TRXs. The proposed TRX was prototyped using a commercial 0.15-<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m E-mode GaAs pseudomorphic high electron mobility transistor (pHEMT) process. The RX exhibits a gain range of 7.3–41.9 dB, a gain step of 1 dB, tunable instantaneous bandwidth from 1 to 4.2 GHz, and noise figure (NF) of 4–4.4 dB. The TX demonstrates gain ranging from 2.1 to 30.4 dB and output 1-dB compression point (OP1dB) of 18.8 dBm. The chip occupies 79.8 mm2 area including a padframe, which will be useful for multifunctional systems.

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Publication Details

Journal
IEEE Transactions on Microwave Theory and Techniques
Published
2025-02-05
DOI
https://doi.org/10.1109/tmtt.2025.3531849
Citations
1
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
Field-Weighted Citation Impact
0.73
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article

A Monolithic Ultrawideband Reconfigurable Dual-Mode Transceiver Front-End Functioning From 0.8 to 18 GHz in GaAs Technology

Fuchen Yan, Zhaowu Wang, Xiaochen Tang, Manjian Chen et al.
1 citations
IEEE Transactions on Microwave Theory and Techniques
Radio Frequency Integrated Circuit Design
0.73
article

A Monolithic Ultrawideband Reconfigurable Dual-Mode Transceiver Front-End Functioning From 0.8 to 18 GHz in GaAs Technology

Fuchen Yan, Zhaowu Wang, Xiaochen Tang, Manjian Chen, Zhenyu Wang, Yong Wang, Xinyan Li, Huikun Zeng, Kang Peng, Shu Ma, Ze Yu
article en
1 citations

Abstract

This article presents a monolithic 0.8- to 18-GHz reconfigurable dual-mode transceiver (TRX) design with direction and conversion functions. In the direction mode, the TRX processes the signals in a frequency range from 0.8 to 5 GHz. In the conversion mode, it up-converts or down-converts the signals at a frequency from 4.5 to 18 GHz. An overlap of 0.5 GHz exists in the two modes, so that the TRX will be flexible in frequencies from 4.5 to 5 GHz. The receiver (RX) deploys a distributed low-noise amplifier (LNA), three driven amplifiers, a down-conversion mixer, a tunable low-pass filter (LPF), a variable gain amplifier (VGA), and two single-pole-double-throw (SPDT) switches. The transmitter (TX) consists of a VGA, an up-conversion mixer, a reconfigurable distributed power amplifier (PA), three driven amplifiers, and two SPDT switches. In the RX, the two modes share the usage of LNA, tunable LPF, and VGA. Similarly, the two modes of TX share the usage of VGA and PA. Moreover, the PA is designed using reconfigurable bias inductors (INDs) to enhance power efficiency, which is also critical for TRXs. The proposed TRX was prototyped using a commercial 0.15-<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m E-mode GaAs pseudomorphic high electron mobility transistor (pHEMT) process. The RX exhibits a gain range of 7.3–41.9 dB, a gain step of 1 dB, tunable instantaneous bandwidth from 1 to 4.2 GHz, and noise figure (NF) of 4–4.4 dB. The TX demonstrates gain ranging from 2.1 to 30.4 dB and output 1-dB compression point (OP1dB) of 18.8 dBm. The chip occupies 79.8 mm2 area including a padframe, which will be useful for multifunctional systems.

IEEE Transactions on Microwave Theory and TechniquesVol. 73(8)
University of Electronic Science and Technology of China (CN)
Affordable and clean energy
Openalex Percentile: Top 32%
Radio Frequency Integrated Circuit Design
0.73
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