The Au decoration effect on performance enhancement of photodetector in MoS2 nanosheets

Molybdenum disulfide nanostructures (NSs) are created using a thermal chemical vapor deposition method (TCVD). These NSs are then decorated with Au to form Au/MoS<sub>2</sub> nano heterojunctions (NHs) using a Physical vapor deposition method. The goal is to create high-performance photodetectors. To study the as-prepared structures, X-ray diffraction, Raman, and UV-Visible spectroscopy are applied to analyze the structural and optical properties. The photodetectors' responsivity (R), detectivity (D), external quantum efficiency (EQE) and stability are then tested using different laser power for incident light at wavelengths of 405 and 635 nm. The results suggest that these devices have the potential for future applications in optoelectronics.

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Publication Details

Journal
Heliyon
Published
2025-02-01
DOI
https://doi.org/10.1016/j.heliyon.2025.e42492
Citations
3
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
1.55
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article

The Au decoration effect on performance enhancement of photodetector in MoS2 nanosheets

Ramin Mohammadkhani, Anahita Taherkhani
3 citations
Heliyon
2D Materials and Applications
1.55
article

The Au decoration effect on performance enhancement of photodetector in MoS2 nanosheets

Ramin Mohammadkhani, Anahita Taherkhani
article en
3 citations

Abstract

Molybdenum disulfide nanostructures (NSs) are created using a thermal chemical vapor deposition method (TCVD). These NSs are then decorated with Au to form Au/MoS<sub>2</sub> nano heterojunctions (NHs) using a Physical vapor deposition method. The goal is to create high-performance photodetectors. To study the as-prepared structures, X-ray diffraction, Raman, and UV-Visible spectroscopy are applied to analyze the structural and optical properties. The photodetectors' responsivity (R), detectivity (D), external quantum efficiency (EQE) and stability are then tested using different laser power for incident light at wavelengths of 405 and 635 nm. The results suggest that these devices have the potential for future applications in optoelectronics.

HeliyonVol. 11(4)
University of Zanjan (IR)
Openalex Percentile: Top 20%
2D Materials and Applications
1.55
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