Detection of defects with carbon–carbon single-bonds in near-surface region of SiC induced by low-oxygen-partial-pressure annealing by using FTIR

Abstract In this study, we investigated the formation of defects with carbon–carbon single-bonds in 4H-SiC induced by high-temperature annealing under low oxygen-partial-pressure ( P o 2 ) conditions, using attenuated total reflectance Fourier-transform infrared spectroscopy. The results show that the carbon–carbon single-bonds were formed significantly at 1500 °C with P o 2 around 10 −1 Pa. According to the thermodynamic considerations, our results indicate that the formation of the carbon-related defects in SiC is driven by the oxidation reaction under the condition with high-temperature and low- P o 2 accompanied with a sublimation of Si and CO from the surface.