Wavelength dependence of thermoreflectance coefficient of TiNi thin film

Abstract The temperature dependence of the reflectance of TiNi thin films was measured using a developed temperature modulation-free thermoreflectance measurement equipment integrated with a precise temperature control system. Consequently, the temperature dependence of the reflectance was successfully measured at three wavelengths with uncertainties confined to within ±3% at 80 °C. In addition, a very low temperature dependence of the reflectance of the order of 10 −6 [1 °C −1 ] was confirmed. The linearity uncertainty of the temperature dependence of the reflectance was evaluated and determined to be within ±15.52%.

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Publication Details

Journal
Japanese Journal of Applied Physics
Published
2025-02-05
DOI
https://doi.org/10.35848/1347-4065/adb299
Citations
3
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
3.77
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article

Wavelength dependence of thermoreflectance coefficient of TiNi thin film

Taichi Murakami, Toshiyuki Tsuchiya, Masaki Shimofuri, Shugo Miyake
3 citations
Japanese Journal of Applied Physics
GaN-based semiconductor devices and materials
3.77
article

Wavelength dependence of thermoreflectance coefficient of TiNi thin film

Taichi Murakami, Toshiyuki Tsuchiya, Masaki Shimofuri, Shugo Miyake
article en
3 citations

Abstract

Abstract The temperature dependence of the reflectance of TiNi thin films was measured using a developed temperature modulation-free thermoreflectance measurement equipment integrated with a precise temperature control system. Consequently, the temperature dependence of the reflectance was successfully measured at three wavelengths with uncertainties confined to within ±3% at 80 °C. In addition, a very low temperature dependence of the reflectance of the order of 10 −6 [1 °C −1 ] was confirmed. The linearity uncertainty of the temperature dependence of the reflectance was evaluated and determined to be within ±15.52%.

Japanese Journal of Applied PhysicsVol. 64(3)
Openalex Percentile: Top 9%
GaN-based semiconductor devices and materials
3.77
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