Voltage-operating reservoir computing utilizing ferroelectric-FET source follower configurations
Abstract We investigate FeFET reservoir computing (RC) utilizing a voltage readout scheme instead of the conventional current readout scheme to reduce the power consumption of an RC system and expand the range of applications. The voltage-output RC operates with time-series V out data of a source follower of a FeFET (FeSF), to effectively utilize temporal memory as well as nonlinearity originating from ferroelectric polarization dynamics. We show that this RC system can solve several nonlinear tasks including time-series data prediction. Furthermore, to achieve higher computational performance in voltage-output FeSF RC, an FET is inserted between the source of the FeFET and the ground, which can operate as a current source to mitigate the slow pull-down operation of voltage-output FeSF RC. We also propose an RC system utilizing voltage responses from complementary working FeSFs with original and inverted gate input patterns to demonstrate high RC performance.
Authors
- Mitsuru Takenaka (ORCID: https://orcid.org/0000-0002-9852-1474)
- Shinichi Takagi (ORCID: https://orcid.org/0000-0002-5601-2604)
- Rikuo Suzuki (ORCID: https://orcid.org/0009-0002-1952-3509)
- Eishin Nako (ORCID: https://orcid.org/0000-0002-2675-0315)
- Ryosho Nakane (ORCID: https://orcid.org/0000-0002-9059-9349)
- Kasidit Toprasertpong
Institutions
- The University of Tokyo (JP)
Publication Details
- Journal
- Japanese Journal of Applied Physics
- Published
- 2025-02-01
- DOI
- https://doi.org/10.35848/1347-4065/adb295
- Citations
- 5
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 3.65