Ion-Gel Gated Perovskite Field-Effect Transistors with Low Power Consumption and High Stability for Neuromorphic Applications

Ruddlesden-Popper (RP) tin halide perovskites (THPs), exemplified by PEA₂SnI₄, are promising two-dimensional semiconductors for optoelectronic applications, yet their field-effect transistors (FETs) often suffer from high operating voltages and stability issues. Addressing these challenges, we developed a novel approach for integrating ion gel dielectrics composed of PVDF-HFP and [EMIM⁺][TFSI^-] with PEA₂SnI₄, achieving FETs with record-low operating voltages as low as 2 V. Additionally, by substituting PEA⁺ with BA⁺ in BA₂SnI₄ FETs, we achieve enhanced device stability, with these devices exhibiting prolonged functionality exceeding 100 days. Uniform performance was also observed across 30 randomly tested devices fabricated on a 2 inch silicon wafer. These FETs also demonstrated synaptic behavior with ultralow energy consumption (5 × 10^-11 J per operation). Leveraging these advancements, we constructed artificial neural networks for item classification, achieving high accuracy (97%). Moreover, the energy consumption for a single training process based on ion-gel gated BA₂SnI₄ FETs is approximately 2 orders of magnitude lower than that of similar networks based on the NVIDIA GeForce RTX 4060 GPU. Our results highlight the potential of ion-gel gated BA₂SnI₄ FETs for low-power, high-stability applications, paving the way for the next generation of perovskite-based electronic and neuromorphic devices.