Light emitters based on ZnSe

It has been found that hetero layers of typical β-ZnSe and atypical α-ZnSe modifications can be obtained by the isovalent substitution method. Isovalent impurities are formed which predetermine the formation of dominant radiation with a quantum yield of η = 12–15% in the short wavelength edge region. Low-temperature studies and λ-modulation techniques allowed us to identify the radiation components. This radiation is generated by interband recombination and exciton annihilation. The high temperature stability of the radiation was confirmed over temperature variations including 77, 300, and 480 K.