Enhancement of responsivity and a self-powered on-chip LNOI integrated Bi<sub>2</sub>Te<sub>3</sub> photodetector array
The topological insulator Bi<sub>2</sub>Te<sub>3</sub> possesses an extraordinary optoelectronic property for wide-band optoelectronics device applications. In this study, we demonstrate a high-responsivity and self-powered on-chip lithium niobate on insulator (LNOI) waveguide-integrated Bi<sub>2</sub>Te<sub>3</sub> photodetector array operating at 1550 nm. Enhancement of responsivity is attributed to the decreased Bi<sub>2</sub>Te<sub>3</sub>/Au contact resistance, which is facilitated by electrothermal annealing. The post-electrothermal annealed on-chip photodetector was demonstrated a photocurrent response increased by four orders of magnitude, reaching as high as 5.5 µA. It features a photoresponsivity of 60 mA/W and a response time of 10 µs. The uniform performance of the fabricated Bi<sub>2</sub>Te<sub>3</sub> photodetector arrays integrated with 4× multi-mode interference on the same LNOI photonic chips proves its potential for applications in high-efficiency optical communication, optical computing, and large-scale data processing.
Authors
- Qiaonan Dong
- yong zheng
- Hongxin Qi
- Ya Cheng (ORCID: https://orcid.org/0000-0001-8269-5907)
- Xinxing Sun (ORCID: https://orcid.org/0009-0005-8629-6520)
- Rongbo Wu (ORCID: https://orcid.org/0000-0001-8012-0456)
- Lang Gao
- Tingfei YUAN
Institutions
- Chinese Academy of Sciences (CN)
- ShanghaiTech University (CN)
- East China Normal University (CN)
Publication Details
- Journal
- Optics Letters
- Published
- 2025-02-05
- DOI
- https://doi.org/10.1364/ol.553705
- Citations
- 5
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 3.65
Funders
- National Natural Science Foundation of China
- Science and Technology Commission of Shanghai Municipality
- National Key Research and Development Program of China
- Fundamental Research Funds for the Central Universities