Nearly Ideal WS₂ Schottky Diode with Asymmetric Gate Control Enabled by One-Side Edge Suspension

For two-dimensional materials (2DMs), challenges related to doping, contact, and structure engineering limit their practical implementation in basic electronic components, such as field-effect transistors (FETs) and diodes. A key issue is Fermi level pinning, which prevents the effective tuning of the Schottky barrier height (SBH). In this work, we propose an approach based on van der Waals stacking of multilayer WS2 and few-layer graphene, incorporating a one-side edge suspension at the Au contact, which exhibits a high SBH. This design provides effective screening of the gate field, resulting in nearly ideal Schottky diode characteristics over the whole gate voltage sweeping window. Furthermore, our approach creates special asymmetric gate controllability between different drain-bias polarities, enabling unipolar gate modulation of forward-bias current while maintaining an ultralow reverse leakage at picoampere range. The one-side edge suspension design integrates functionalities of both the diode and FETs, revealing a promising application for 2DMs in areas such as current rectification and logic operations.