Reconfigurable Organic Electrochemical Transistors with High Dynamic Ranges for Fully Integrated Physical Reservoir Computing

Abstract Reconfigurable organic electrochemical transistors (r‐OECTs) are considered a promising platform for fully integrated physical reservoir computing (RC) owing to their dual switching modes, which are suitable for both the reservoir and readout layers. However, their restricted dynamic ranges (DR) have constrained their nonlinearity, high‐dimensional mapping capacity, and the reconfigurability of neural networks for optimal physical RC. In this study, r‐OECTs with a modified PEDOT:PSS channel and solid electrolyte is designed and fabricated, achieving dual‐modal essential synaptic functions (nonvolatile and volatile) through ethylene glycol (EG) content adjustment. The r‐OECTs with the EG of 680 and 1000 µL exhibit exceptional DR of 1.12 × 10⁵ in nonvolatile mode and 1.20 × 10 3 volatile mode, respectively, representing a significant improvement over previously reported OECTs. The nonvolatile mode exhibits long‐term memory with robust and gradual long‐term potentiation (LTP) and long‐term depression (LTD), while the volatile mode demonstrates short‐term memory for extracting reservoir states. The r‐OECTs, functioning in two modes as the reservoir and readout layers with high DRs, enable accurate classification of human activities such as jogging (J), brushing teeth (B), and folding clothes (F) with an accuracy of 84.38% in a fully integrated physical RC system.

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Institutions

Publication Details

Journal
Advanced Functional Materials
Published
2025-02-03
DOI
https://doi.org/10.1002/adfm.202423814
Citations
14
Primary Topic
Neural Networks and Reservoir Computing
Type
article
Field-Weighted Citation Impact
34.73

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article

Reconfigurable Organic Electrochemical Transistors with High Dynamic Ranges for Fully Integrated Physical Reservoir Computing

Sungjune Jung, Young Ran Park, Donghyeok Kim, Jung Sun Eo et al.
14 citations
Advanced Functional Materials
Neural Networks and Reservoir Computing
34.73
article

Reconfigurable Organic Electrochemical Transistors with High Dynamic Ranges for Fully Integrated Physical Reservoir Computing

Sungjune Jung, Young Ran Park, Donghyeok Kim, Jung Sun Eo, Gunuk Wang, Seong Jun Park, Mingyu Kim
article en
14 citations

Abstract

Abstract Reconfigurable organic electrochemical transistors (r‐OECTs) are considered a promising platform for fully integrated physical reservoir computing (RC) owing to their dual switching modes, which are suitable for both the reservoir and readout layers. However, their restricted dynamic ranges (DR) have constrained their nonlinearity, high‐dimensional mapping capacity, and the reconfigurability of neural networks for optimal physical RC. In this study, r‐OECTs with a modified PEDOT:PSS channel and solid electrolyte is designed and fabricated, achieving dual‐modal essential synaptic functions (nonvolatile and volatile) through ethylene glycol (EG) content adjustment. The r‐OECTs with the EG of 680 and 1000 µL exhibit exceptional DR of 1.12 × 10⁵ in nonvolatile mode and 1.20 × 10 3 volatile mode, respectively, representing a significant improvement over previously reported OECTs. The nonvolatile mode exhibits long‐term memory with robust and gradual long‐term potentiation (LTP) and long‐term depression (LTD), while the volatile mode demonstrates short‐term memory for extracting reservoir states. The r‐OECTs, functioning in two modes as the reservoir and readout layers with high DRs, enable accurate classification of human activities such as jogging (J), brushing teeth (B), and folding clothes (F) with an accuracy of 84.38% in a fully integrated physical RC system.

Advanced Functional MaterialsVol. 35(26)
Pohang University of Science and Technology (KR), Korea University (KR)
National Research Foundation, Korea University, Korea Institute of Science and Technology, National Research Foundation of Korea
Openalex Percentile: Top 0%
Neural Networks and Reservoir Computing
34.73
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