Flexible Hybrid Integration Hall Angle Sensor Compatible with the CMOS Process
Silicon-based Hall application-specific integrated circuit (ASIC) chips have become very successful, making them ideal for flexible electronic and sensor devices. In this study, we designed, simulated, and tested flexible hybrid integration angle sensors that can be made using complementary metal-oxide-semiconductor (CMOS) technology. These sensors are manufactured on a 100 µm-thick flexible polyimide (PI) membrane, which is suitable for large-scale production and has strong potential for industrial use. The Hall sensors have a sensitivity of 0.205 V/mT. Importantly, their sensitivity remains stable even after being bent to a minimum radius of 10 mm and after undergoing 100 bending cycles. The experiment shows that these flexible hybrid integration devices are promising as angle sensors.
Authors
- Huihuo Zheng (ORCID: https://orcid.org/0000-0001-9008-9552)
- Youtong Fang (ORCID: https://orcid.org/0000-0002-8521-4184)
- Yang Lv (ORCID: https://orcid.org/0009-0002-1682-9991)
- Ye Luo
- Ke Guan (ORCID: https://orcid.org/0000-0003-3748-2245)
Institutions
- Zhejiang University (CN)
Publication Details
- Journal
- Sensors
- Published
- 2025-02-04
- DOI
- https://doi.org/10.3390/s25030927
- Citations
- 2
- Primary Topic
- Magnetic Field Sensors Techniques
- Type
- article
- Field-Weighted Citation Impact
- 1.46
Funders
- Zhejiang University
- Coastal Response Research Center, University of New Hampshire
- National Key Research and Development Program of China