Study of the electronic structure of NixTiSe2 by EMF method

The electron structure of the NixTiSe2 system has been studied by the electromotive force (EMF) method in Cu|Cu+|NixTiSe2 and Na|Na+|NixTiSe2 electrochemical cells. Two critical transitions have been found in this system at x = 0.25 and x = 0.35. At these compositions, a change in the nature of the chemical bond of nickel with its local environment occurs. The simple and useful EMF method has been applied as the instrument to study features of electron structure. A comparative analysis of critical points in the electronic structure of the MexTiSe2 (Me = Fe, Co, Ni) intercalate compounds was carried out.

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Publication Details

Journal
The Journal of Chemical Physics
Published
2025-02-04
DOI
https://doi.org/10.1063/5.0249054
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
Field-Weighted Citation Impact
0.00

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article

Study of the electronic structure of NixTiSe2 by EMF method

A. S. Shkvarin, Е. А. Суслов, A.Yu. Kuznetsova
The Journal of Chemical Physics
Advanced Thermoelectric Materials and Devices
article

Study of the electronic structure of NixTiSe2 by EMF method

A. S. Shkvarin, Е. А. Суслов, A.Yu. Kuznetsova
article en

Abstract

The electron structure of the NixTiSe2 system has been studied by the electromotive force (EMF) method in Cu|Cu+|NixTiSe2 and Na|Na+|NixTiSe2 electrochemical cells. Two critical transitions have been found in this system at x = 0.25 and x = 0.35. At these compositions, a change in the nature of the chemical bond of nickel with its local environment occurs. The simple and useful EMF method has been applied as the instrument to study features of electron structure. A comparative analysis of critical points in the electronic structure of the MexTiSe2 (Me = Fe, Co, Ni) intercalate compounds was carried out.

The Journal of Chemical PhysicsVol. 162(5)
M.N. Mikheev Institute of Metal Physics (RU)
Ministry of Education and Science of the Russian Federation
Openalex Percentile: Top 99%
Advanced Thermoelectric Materials and Devices
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