Light-induced quantum anomalous Hall effect in kagome noncollinear antiferromagnets

We put forward that circularly polarized light is a versatile way to manipulate the quantum anomalous Hall effect (QAHE) in kagome noncollinear antiferromagnets. Employing model analysis and first-principles calculations, we investigate the origin of nontrivial insulator and nonvanishing anomalous Hall conductivity, where a topological phase transition from nontrivial semimetals to Chern insulators emerges accompanied by the breaking of mirror symmetry $\mathcal{M}$ and combined symmetry ${\mathcal{C}}_{6z}\mathcal{T}$. In particular, both the organic and inorganic material candidates, i.e., ${\mathrm{Cr}}_{3}{\text{(HAB)}}_{2}$ and ${\mathrm{Cr}}_{3}{\mathrm{Te}}_{2}$ monolayers, are proposed to realize the Floquet-engineered QAHE, confirmed via nonzero Chern numbers $\mathcal{C}=\ifmmode\pm\else\textpm\fi{}1$ and the emergence of one chiral edge state in the nanoribbons. Moreover, a tight-binding model is constructed to demonstrate the generality and feasibility of attaining Floquet-engineered QAHE in kagome noncollinear antiferromagnets. These findings hold substantial significance for the combination of QAHE, Floquet engineering, and noncollinear antiferromagnets with high possibility of innovative applications in topological spintronics.