Photo‐Gain Effect in κ‐Ga <sub>2</sub> O <sub>3</sub> UV‐C Photoresistors Induced by Trapping of Photogenerated Holes
The “photo‐gain effect” amplifying the DC photocurrent of κ‐Ga 2 O 3 UV‐C photoresistors is analyzed by means of 2D numerical simulations and linked to the capture of photogenerated holes by deep donor levels, probably associated with oxygen vacancies. The resulting ionization of the deep donors leads to an increase in the electron density, hence to enhanced conductivity under illumination.
Authors
- G. Verzellesi (ORCID: https://orcid.org/0000-0001-5770-6512)
- Piero Mazzolini (ORCID: https://orcid.org/0000-0003-2092-5265)
- R. Fornari (ORCID: https://orcid.org/0000-0002-4499-8015)
- Abderrahim Moumen (ORCID: https://orcid.org/0000-0002-8970-9627)
- A. Parisini (ORCID: https://orcid.org/0000-0003-4212-5074)
- M. Pavesi (ORCID: https://orcid.org/0000-0002-2919-0106)
- L. Seravalli (ORCID: https://orcid.org/0000-0003-2784-1785)
- R. Mosca (ORCID: https://orcid.org/0000-0001-8791-5251)
- Giovanna Sozzi (ORCID: https://orcid.org/0000-0002-4884-2843)
- Matteo Bosi
- A. Baraldi (ORCID: https://orcid.org/0000-0002-4856-9744)
- Andrea Asteriti
Institutions
- University of Modena and Reggio Emilia (IT)
- University of Parma (IT)
- Institute of Materials for Electronics and Magnetism (IT)
Publication Details
- Journal
- physica status solidi (b)
- Published
- 2025-02-04
- DOI
- https://doi.org/10.1002/pssb.202400581
- Citations
- 2
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.85
Funders
- Ministero dell’Istruzione, dell’Università e della Ricerca