1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications

In this study, the device properties of gallium nitride (GaN) enhancement-mode (E-mode) recessed-gate high-electron-mobility transistor (HEMT) are thoroughly characterized and investigated for low-noise amplifier (LNA) applications. Through low-damage argon-based neutral beam etching (Ar-NBE) technology, the recessed-gate HEMT achieves a positive voltage threshold (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V} _{\text {TH}}$ </tex-math></inline-formula>) of 0.5 V, a maximum transconductance (gm) of 148 mS/mm, and an <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small>-state gate leakage current (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I} _{\text {G}}$ </tex-math></inline-formula>) of 2.39 nA/mm. The device reveals a 1.48-dB minimum noise figure (NFmin), a 14.43-dB associated gain (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${G} _{\text {a}}$ </tex-math></inline-formula>), and a 40.2-<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Omega $ </tex-math></inline-formula> equivalent noise resistance (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R} _{\text {N}}$ </tex-math></inline-formula>), at a working frequency of 2 GHz. As the frequency increases to 3.5 GHz, the NFmin slightly increases to 1.95 dB. In addition, the device obtained a cutoff frequency (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f} _{\text {T}}$ </tex-math></inline-formula>/<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f} _{\text {MAX}}$ </tex-math></inline-formula>) of 9.6/27.8 GHz and an input third-order interception point (IIP3) of 10.3 dBm at 2 GHz. This work provides a promising strategy for the implementation of high-performance E-mode LNAs.