New Evidence for Nonradiative Recombination Enhanced Defect Reaction Effect at Si-SiO₂ Interface Traps

The evolution states of Si-SiO2 interface traps have been attracting much attention, but there are few reports on the recombination enhanced defect reaction (REDR) effect at interface traps. Here, the REDR effect is studied at the Si-SiO2 interface in the base region of gate-controlled lateral p-n-p transistors (GLPNPs) by forward bias method. There is a significant correlation between the peak variation and the ionization defects (oxide charges and interface traps) in gate sweep (GS) curve. For GLPNPs with high oxide charges and low interface traps, the change rate of surface recombination current at peak in GS curve is smaller. This result provides strong evidence for the REDR effect of interface traps. In addition, based on technology computer-aided design (TCAD) simulation, the possible change of interface traps state after REDR effect is proposed.