AlScN Ferroelectric Diode Enabled CAM With 4F² Cell Size and Low Thermal Budget (330 °C)
In pursuit of high-density three-dimensional integrated content addressable memories (CAMs), we experimentally reported the single AlScN ferroelectric diode-enabled CAM, having an ultra-compact cell size of 4 F2 and a low thermal budget of 330 °C. This is realized by implementing one resistor (1R)-architecture cell design coupled with utilization of emerging ferroelectric AlScN. Such an easily implementable yet highly effective approach for high-density integrated CAMs holds significant promise for propelling forthcoming data-intensive applications forward.
Authors
- Jiawei Li (ORCID: https://orcid.org/0000-0001-5661-3912)
- Bochang Li (ORCID: https://orcid.org/0000-0002-8195-6842)
- Jiuren Zhou (ORCID: https://orcid.org/0000-0002-0915-5354)
- Genquan Han (ORCID: https://orcid.org/0000-0001-5140-4150)
- Siying Zheng (ORCID: https://orcid.org/0000-0001-5957-4824)
- 孝志 沢口
- Yan Liu (ORCID: https://orcid.org/0000-0001-5583-0587)
- Yue Hao (ORCID: https://orcid.org/0000-0002-8081-2919)
- Danyang Yao (ORCID: https://orcid.org/0009-0000-3885-6566)
- Wenxin Sun (ORCID: https://orcid.org/0009-0006-0937-8482)
- Tao Wu (ORCID: https://orcid.org/0000-0003-1563-2994)
Institutions
- Xidian University (CN)
- ShanghaiTech University (CN)
Publication Details
- Journal
- IEEE Electron Device Letters
- Published
- 2025-02-04
- DOI
- https://doi.org/10.1109/led.2025.3538669
- Citations
- 2
- Primary Topic
- Advanced ceramic materials synthesis
- Type
- article
- Field-Weighted Citation Impact
- 1.45
Funders
- National Natural Science Foundation of China
- National Key Research and Development Program of China